Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-30
2005-08-30
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S240000, C438S381000, C438S003000, C257S310000, C365S145000, C365S149000
Reexamination Certificate
active
06936876
ABSTRACT:
A ferroelectric capacitor in a semiconductor device is constructed of a Pt lower electrode, a ferroelectric thin film and a Pt upper electrode that are successively laminated onto a silicon substrate. The ferroelectric thin film is constructed of a plurality of SBT layers. Crystal grains of the SBT layer are formed smaller than the crystal grains of the SBT layers. The SBT layer having small size grains improves the electrical characteristics and the ferroelectric characteristics of the ferroelectric capacitor.
REFERENCES:
patent: 5635420 (1997-06-01), Nishioka
patent: 5736759 (1998-04-01), Haushalter
patent: 5817170 (1998-10-01), Desu et al.
patent: 5970337 (1999-10-01), Nishioka
patent: 5998819 (1999-12-01), Yokoyama et al.
patent: 6033920 (2000-03-01), Shimada et al.
patent: 6143597 (2000-11-01), Matsuda et al.
patent: 6151240 (2000-11-01), Suzuki
patent: 6153898 (2000-11-01), Watanabe et al.
patent: 6338970 (2002-01-01), Suh
patent: 2004/0056290 (2004-03-01), Kanaya et al.
patent: 0 114 228 (1984-08-01), None
patent: 0 709 355 (1996-05-01), None
patent: 0 797 244 (1997-09-01), None
patent: 0 821 415 (1998-01-01), None
patent: 10321809 (1998-12-01), None
patent: 11026706 (1999-01-01), None
patent: 06-140570 (1994-05-01), None
patent: 8-078636 (1996-03-01), None
patent: 08-279599 (1996-10-01), None
patent: 8-325019 (1996-12-01), None
patent: 08-340085 (1996-12-01), None
patent: 9-025124 (1997-01-01), None
patent: 09-036309 (1997-02-01), None
patent: 10-050960 (1998-02-01), None
patent: 10-321809 (1998-12-01), None
patent: 2000-058770 (2000-02-01), None
patent: 2000-067648 (2000-03-01), None
patent: 1999-5439 (1999-02-01), None
patent: WO 96/05334 (1996-02-01), None
Jia et al., “Low leakage current BaTiO3thin film capacitors using a multilayer construction,” Elsevier Science, S.A., Thin Solid Films, vol. 259, No. 2 (1995), pp. 264-269.
Diaz José R.
Nixon & Vanderhye PC
Thomas Tom
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