Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-05
2005-04-05
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000
Reexamination Certificate
active
06876021
ABSTRACT:
The present invention forms sidewall diffusion barrier layer(s) that mitigate hydrogen contamination of ferroelectric capacitors. Sidewall diffusion barrier layer(s) of the present invention are formed via a physical vapor deposition process at a low temperature. By so doing, the sidewall diffusion barrier layer(s) are substantially amorphous and provide superior protection against hydrogen diffusion than conventional and/or crystalline sidewall diffusion barrier layers.
REFERENCES:
patent: 5452178 (1995-09-01), Emesh et al.
patent: 5972722 (1999-10-01), Visokay et al.
patent: 6090697 (2000-07-01), Xing et al.
patent: 6144060 (2000-11-01), Park et al.
patent: 6177351 (2001-01-01), Beratan et al.
patent: 6225656 (2001-05-01), Cuchiaro et al.
patent: 6242299 (2001-06-01), Hickert
patent: 6261967 (2001-07-01), Athavale et al.
patent: 6291251 (2001-09-01), Nam
patent: 6423592 (2002-07-01), Sun
patent: 6495413 (2002-12-01), Sun et al.
patent: 6528386 (2003-03-01), Summerfelt et al.
patent: 6534809 (2003-03-01), Moise et al.
patent: 6576482 (2003-06-01), Aggarwal et al.
patent: 6611014 (2003-08-01), Kanaya et al.
patent: 20010034108 (2001-10-01), Moise et al.
patent: 20010044205 (2001-11-01), Gilbert et al.
“FeRAM Tutorial”, Ali Sheikholeslami and P. Glenn Gulak, A survey of circuit Innovations in Ferroelectric random-access memories, Proceedings of the IEEE, vol. 88, No. 3, May, 2000, 3 pages, taken from the Internet at: http://www.eecg.toronto.edu/-ali/ferro/tutorial.html.
“A survey of Circuit Innovations in Ferroelectric Random Access Memories”, Ali Sheikholeslami and P. Glenn, Proceedings of the IEEE, vol. 88, No. 5, May, 2000, pp. 667-689.
“Generic CVD Reactor”, CVD Basics, Daniel M. Dobkin, Dec. 7, 2001, 3 pages, taken from the Internet at: http://www.batnet.com/enigmatics/semiconductor_processing/CVD_Fundamentals/Introdu . . . .
“Physical Vapor D position”, Cougar Labs, Inc., Dec. 7, 2001, 9 pages, taken from the internet at: http://www.cougarlabs.com/pvd1.html.
“Parasitic Channel Induced by Spin-On-Glass In a Double-Level Metallizaiton Complimentary Metal Oxide Semiconductor Process”, M. Murata, K. Yomauchi, H. Kojima, A. Yokoyama, T. Inoue and T. Iwamori, published in the Journal of Electrochemical Society, vol. 149, No. 8, 1993, pp. 2346-2356.
“Effects of Oxygen Content on Properties of Silicon Oxide Films Prepared at Room Temperature by Sputtering-Type Electron Cyclotron Resonance Plasma”, Katsuhiko Furukawa, Yichun Liu, Hiroshi Nakashima, Dawei Gao, Yasuhiro Kashiwazaki, Kiichiro Uchino, Katsunori Muraoka and Hirohisa Tsuzuki, Journal of Applied Physics, vol. 84, No. 8, Oct. 15, 1998, pp. 4579-4584.
Notes taken at the International Symposium on Applications of Ferroelectrics Conference in Nara, Japan in May, 2002. The speaker was H. Nagel of Infineon Technologies and Toshiba Corporation, Key Technologies for High Density FeRAM Application, one page.
“The Hydrogen Content of Plasma-Deposited silicon Nitride”, W. A. Lanford and M. J. Rand, American Institute of Physics, J. Appl. Phys. 49(4), Apr. 1978, pp. 2473-2477.
“Free Energy Model for the Analysis of Bonding ina-SixNyHzAlloys”, Z. Yin and W. Smith, J. Vac. Sci. Technol. A. vol. 9, No. 3, MayJun. 1991, p. 972.
“Comparison Between HCP CVD and PECVD Silicon Nitride for Advanced Interconnect Applications”, J. Yota, M. Janani, L.E. Camilletti, A. Kar-Roy, Q.Z. Liu, C. Nguyen, M.D. Woo J. Hander, and P. Van Cleemput, IEEE, pp. 76-78.
“Hydrogen Role on the Properties of Amorphous Silicon Nitride”, F. De Brito Mots, J.F. Justo and A. Fazzio, Journal of Applied Physics, vol. 86, No. 4, Aug. 15, 1999, pp. 1843-1847.
Aggarwal Sanjeev
Colombo Luigi
Hall Lindsey
Kuchimanchi Sirisha
Martin J. Scott
Brady III W. James
Garner Jacqueline J.
Nguyen Thinh T
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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