Interconnect with composite barrier layers and method for...

Details Interconnect with composite barrier layers and method for... Interconnect with composite barrier layers and method for...

2005-10-25

2005-10-25

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S627000, C438S653000, C438S672000, C438S675000

Reexamination Certificate

active

06958291

ABSTRACT:
Composite ALD-formed diffusion barrier layers. In a preferred embodiment, a composite conductive layer is composed of a diffusion barrier layer and/or a low-resistivity metal layer formed by atomic layer deposition (ALD) lining a damascene opening in dielectrics, serving as diffusion blocking and/or adhesion improvement. The preferred composite diffusion barrier layers are dual titanium nitride layers or dual tantalum nitride layers, triply laminar of tantalum, tantalum nitride and tantalum-rich nitride, or tantalum, tantalum nitride and tantalum, formed sequentially on the opening by way of ALD.

REFERENCES:
patent: 6607976 (2003-08-01), Chen et al.
patent: 6720248 (2004-04-01), Ryo
patent: 6841466 (2005-01-01), Yu et al.
patent: 6849298 (2005-02-01), Pyo

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