Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-19
2005-04-19
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S268000
Reexamination Certificate
active
06882006
ABSTRACT:
A field effect transistor occupying a small area and a semiconductor device using the same can be obtained. A gate electrode is provided on a substrate on which a source region is provided with a first interlayer insulating film interposed therebetween. The gate electrode is covered with a second interlayer insulating film. A contact hole for exposing a part of the surface of the source region is provided so as to penetrate through the first interlayer insulating film, the gate electrode, and the second interlayer insulating film. A sidewall surface of the contact hole is covered with a gate insulating film. A first semiconductor layer of a first conductivity type is provided on the surface of the source region in contact therewith up to the lower surface of the gate electrode. A channel semiconductor layer is provided on the surface of the first semiconductor layer up to the upper surface of the gate electrode. A second semiconductor layer of a first conductivity type serving as a drain region is provided on the channel semiconductor layer.
REFERENCES:
patent: 4566025 (1986-01-01), Jastrzebski et al.
patent: 4920397 (1990-04-01), Ishijima
patent: 5016070 (1991-05-01), Sundaresan
patent: 5214296 (1993-05-01), Nakata et al.
patent: 5229310 (1993-07-01), Sivan
patent: 5276343 (1994-01-01), Kumagai et al.
patent: 5308778 (1994-05-01), Fitch
patent: 5336917 (1994-08-01), Kohyama
patent: 5376562 (1994-12-01), Fitch
patent: 5414289 (1995-05-01), Fitch et al.
patent: 5464782 (1995-11-01), Koh
patent: 5587331 (1996-12-01), Jun
patent: 5700727 (1997-12-01), Manning
patent: 5766998 (1998-06-01), Tseng
patent: 5786256 (1998-07-01), Gardner et al.
patent: 5994735 (1999-11-01), Maeda et al.
patent: 63-293874 (1988-11-01), None
patent: 3-225873 (1991-10-01), None
patent: 6-13623 (1994-01-01), None
“Impact of Surrounding Gate Transistor (SGT) for Ultra High-Density LSI's” by Takato e al., IEEE Transations of Electron Devices, vol. 38, No. 3 (Mar. 1991), pp. 573-578.
Kuriyama Hirotada
Maeda Shigenobu
Maegawa Shigeto
Yamaguchi Yasuo
Booth Richard A.
Renesas Technology Corp.
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