Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2005-10-11
2005-10-11
Kielin, Erik (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
active
06953740
ABSTRACT:
A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1×1020cm−3at Al mole fractions up to 65% are obtained.
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Hwang Jeonghyun
Schaff William J.
Cornell Research Foundation Inc.
Dolan Jennifer M
Kielin Erik
Schwegman Lundberg Woessner & Kluth P.A.
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