Semiconductor device of non-volatile memory

Details Semiconductor device of non-volatile memory Semiconductor device of non-volatile memory

2005-10-04

2005-10-04

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C257S320000, C257S321000, C257S322000, C257S326000, C438S201000, C438S211000, C438S257000, C438S266000

Reexamination Certificate

active

06952035

ABSTRACT:
A non-volatile memory semiconductor device includes a first insulation layer, two diffusion regions, a memory gate oxide layer, a first control gate, a second insulation layer, a floating gate of polysilicon, a third insulation layer and a second control gate. The first insulation layer is formed on a semiconductor substrate. The two diffusion regions are formed on a surface of the substrate. The memory gate oxide layer is formed over the two diffusion regions on the substrate. The first control gate including a diffusion region is formed on the surface of the substrate. The second insulation layer is formed on the first control gate. The floating gate of polysilicon is formed over the memory gate oxide layer, the first insulation layer, and the second insulation layer. The third insulation layer is formed on the floating gate. The second control gate is disposed on the floating gate.

REFERENCES:
patent: 5427970 (1995-06-01), Hsue et al.
patent: 6566707 (2003-05-01), Sudo et al.
patent: 4-80544 (1992-12-01), None
patent: 6-85275 (1994-03-01), None
patent: 8-506693 (1996-07-01), None

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