Method of forming photosensitive film pattern

Details Method of forming photosensitive film pattern Method of forming photosensitive film pattern

2005-10-04

2005-10-04

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S270100, C430S311000, C430S394000, C430S396000

Reexamination Certificate

active

06951708

ABSTRACT:
The present invention relates to a method of forming a photosensitive film pattern. It provides a method of forming a photosensitive film pattern capable of performing a photolithography process by blocking an opening of a high aspect ratio trench with a DFR film, during forming a semiconductor element and an MEMS element. In addition, it is possible to prevent the photoresist from flowing into the trench when the liquid photoresist is deposited by a spin coating method to form the photosensitive film pattern for metal pattern to apply electric signal from outside to inside of trench.

REFERENCES:
patent: 6165892 (2000-12-01), Chazan et al.
patent: 6245663 (2001-06-01), Zhao et al.
patent: 6265301 (2001-07-01), Lee et al.
patent: 6582987 (2003-06-01), Jun et al.
patent: 2001242618 (2001-09-01), None
patent: 2002-95497 (2002-12-01), None
English language translation of JP 2001-242618.

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