Thin film magnetic memory device having redundant configuration

Details Thin film magnetic memory device having redundant configuration Thin film magnetic memory device having redundant configuration

2005-04-05

2005-04-05

Nelms, David (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S189070, C365S200000, C365S201000, C365S210130, C365S225500

Reexamination Certificate

active

06876576

ABSTRACT:
Normal memory cells are arranged in rows and columns, and dummy memory cells are arranged to form dummy memory cell rows by sharing memory cell columns with the normal memory cells. When there is at least one defect in the normal memory cells and/or the dummy memory cells, replacement/repair is carried out using a redundant column in a unit of memory cell column. The redundant column includes not only spare memory cells for repair of the normal memory cells but also spare dummy memory cells for repair of the dummy memory cells.

REFERENCES:
patent: 5687330 (1997-11-01), Gist et al.
patent: 20020136053 (2002-09-01), Asano et al.
“A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, Scheuerlein et al., ISSCC Digest of Technical Papers, TA 7.2, Feb., 2000, pp. 94-95, 128-129, 409-410.
“Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, Durlam et al., ISSCC Digest of Technical Papers, TA 7.3, Feb.2000, pp. 96-97, 130-131, 410-411.
“A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, Naji et al., ISSCC Digest of Technical Papers, TA7.6, Feb. 2001, pp. 94-95, 122-123, 404-405, 438.
U.S. Related application Ser. No. 09/982,936, filed Oct. 22, 2001, (Our Ref.: 57454-224).
U.S. Related application Ser. No. 10/153,737, filed May 24, 2002, (Our Ref.: 57454-576).

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