Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-03
2005-05-03
Tran, Michael (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S652000, C438S653000, C438S654000, C438S655000, C438S680000
Reexamination Certificate
active
06887789
ABSTRACT:
A process for providing one or more protected copper elements on a surface of a workpiece is set forth. In accordance with the process, a barrier layer is applied to the workpiece. If the barrier layer is not suitable as a seed layer for subsequent electroplating processes, a separate seed layer is applied over the surface of the barrier layer. One or more copper elements are then electroplated on selected portions of the seed layer or, if suitable, the barrier layer. If used, the seed layer is then substantially removed. At least a portion of a surface of the barrier layer is rendered unplatable while leaving the copper elements suitable for electroplating. A protective layer is then electroplated onto surfaces of the one or more copper elements.
REFERENCES:
patent: 5827604 (1998-10-01), Uno et al.
patent: 5913144 (1999-06-01), Nguyen et al.
patent: 6420262 (2002-07-01), Farrar
Berry Renee R.
Semitool Inc.
Tran Michael
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