Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-24
2005-05-24
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S320000, C257S322000, C365S185180
Reexamination Certificate
active
06897515
ABSTRACT:
A semiconductor memory capable of attaining a low voltage, a high-speed operation, low power consumption and a high degree of integration is obtained. This semiconductor memory comprises a floating gate electrode, a first source/drain region having a diode structure employed for controlling the potential of the floating gate electrode and a second source/drain region formed to hold a channel region between the same and the first source/drain region. Thus, when a channel of a transistor is turned on in reading, a large amount of current flows from the first source/drain region having a diode structure to a substrate, whereby high-speed reading can be implemented. Further, a negative voltage is readily applied to the first source/drain region having a diode structure, whereby a low voltage and low power consumption are attained and the scale of a step-up circuit is reduced, and hence a high degree of integration can be attained.
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Communication from the Japanese Patent Office in application No. 2000-209196 dated May 19, 2004 and English language translation.
Rose Kiesha
Sanyo Electric Co,. Ltd.
Westerman Hattori Daniels & Adrian LLP
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