Methods for making metallization structures for...

Details Methods for making metallization structures for... Methods for making metallization structures for...

2005-05-17

2005-05-17

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S685000

Reexamination Certificate

active

06893961

ABSTRACT:
The present invention provides a metallization structure for semiconductor device interconnects such as a conductive line, including a substrate with a substantially planar upper surface, foundation metal containing layer disposed on a portion of the substrate upper surface, primary conducting metal containing layer overlying the foundation metal containing layer, and metal containing spacer on the sidewalls of the primary conducting metal containing layer and the foundation metal containing layer. The present invention also provides a metallization structure including a substrate with a foundation metal containing layer disposed thereon, a dielectric layer with an aperture therethrough being disposed on the substrate, where the bottom of the aperture exposes the foundation metal containing layer of the substrate, and a metal. containing spacer on the sidewall of the aperture and a line or plug of a primary conducting metal fill the remaining portion of the aperture. The present invention also includes methods for making the metallization structures.

REFERENCES:
patent: 4619037 (1986-10-01), Taguchi et al.
patent: 4988423 (1991-01-01), Yamamoto et al.
patent: 5275973 (1994-01-01), Gelatos
patent: 5300813 (1994-04-01), Joshi et al.
patent: 5317185 (1994-05-01), Fernandes et al.
patent: 5321211 (1994-06-01), Haslam et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5356659 (1994-10-01), Seshubabu et al.
patent: 5475267 (1995-12-01), Ishii et al.
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5498889 (1996-03-01), Hayden
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5534463 (1996-07-01), Lee et al.
patent: 5545590 (1996-08-01), Licata
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5637527 (1997-06-01), Baek
patent: 5701647 (1997-12-01), Saenger et al.
patent: 5712195 (1998-01-01), Chang
patent: 5770519 (1998-06-01), Klein et al.
patent: 5793057 (1998-08-01), Summerfelt
patent: 5808365 (1998-09-01), Mori
patent: 5825609 (1998-10-01), Andricacos et al.
patent: 5879957 (1999-03-01), Joo
patent: 5903053 (1999-05-01), Iijima et al.
patent: 5913143 (1999-06-01), Harakawa
patent: 5917244 (1999-06-01), Lee et al.
patent: 5937319 (1999-08-01), Xiang et al.
patent: 5960282 (1999-09-01), Chuang
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6020233 (2000-02-01), Kim
patent: 6030896 (2000-02-01), Brown
patent: 6046502 (2000-04-01), Matsuno
patent: 6054380 (2000-04-01), Naik
patent: 6060377 (2000-05-01), Xiang et al.
patent: 6071787 (2000-06-01), Joo
patent: 6074943 (2000-06-01), Brennan et al.
patent: 6133635 (2000-10-01), Bothra et al.
patent: 6153900 (2000-11-01), Chang et al.
patent: 6166439 (2000-12-01), Cox
patent: 6180517 (2001-01-01), Liou et al.
patent: 6197682 (2001-03-01), Drynan et al.
patent: 6235626 (2001-05-01), Makino et al.
patent: 6242340 (2001-06-01), Lee
patent: 6255734 (2001-07-01), Liu et al.
patent: 6277745 (2001-08-01), Liu et al.
patent: 6281115 (2001-08-01), Chang et al.
patent: 6285082 (2001-09-01), Joshi et al.
patent: 6307266 (2001-10-01), Yung
patent: 6384438 (2002-05-01), Cho et al.
patent: 6420725 (2002-07-01), Harshfield
patent: 6436816 (2002-08-01), Lee et al.
patent: 6646340 (2003-11-01), Deeter et al.
patent: 6677647 (2004-01-01), Dawson
patent: 20010044202 (2001-11-01), Huang et al.
patent: 01 101 671 (1989-04-01), None
Kordic, Srdjan et al., Size and vol. Distributions of Thermally Induced Stress Voids in AlCu Metallization, Appl. Phys. Lett. 68(8), Feb. 19, 1996.

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