Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-05
2005-04-05
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000
Reexamination Certificate
active
06876030
ABSTRACT:
A semiconductor memory device includes a field-effect transistor with a gate electrode that has been formed over a semiconductor substrate with a ferroelectric layer interposed between the electrode and the substrate. The device includes a first insulating layer, which is insulated against a leakage current more fully than the ferroelectric layer, between the ferroelectric layer and the gate electrode.
REFERENCES:
patent: 5378905 (1995-01-01), Nakamura
patent: 5498888 (1996-03-01), Ozawa
patent: 5998819 (1999-12-01), Yokoyama et al.
patent: 6067244 (2000-05-01), Ma et al.
patent: 6107656 (2000-08-01), Igarashi
patent: 6229166 (2001-05-01), Kim et al.
patent: 6297527 (2001-10-01), Agarwal et al.
patent: 6310373 (2001-10-01), Azuma et al.
patent: 6316800 (2001-11-01), Al-Shareef et al.
patent: 6368517 (2002-04-01), Hwang et al.
patent: 6396092 (2002-05-01), Takatani et al.
patent: 6410397 (2002-06-01), Ochiai et al.
patent: 6461982 (2002-10-01), DeBoer et al.
patent: 6476432 (2002-11-01), Basceri et al.
patent: 6483135 (2002-11-01), Mizuta et al.
patent: 6483167 (2002-11-01), Nabatame et al.
patent: 6486020 (2002-11-01), Thakur et al.
patent: 20010040249 (2001-11-01), Jung
patent: 20020043677 (2002-04-01), Jung
patent: 20020074601 (2002-06-01), Fox et al.
patent: 199 28 280 A 1 (2000-01-01), None
patent: 0 688 046 (1995-12-01), None
patent: 0 797 244 (1997-09-01), None
patent: 49-079434 (1974-07-01), None
patent: 05-090599 (1993-04-01), None
patent: 05-090599 (1993-04-01), None
patent: 405129625 (1993-05-01), None
patent: 07-099257 (1995-04-01), None
patent: 09-260612 (1997-10-01), None
patent: 10-294432 (1998-11-01), None
patent: 11-177037 (1999-07-01), None
patent: 2003-510848 (2003-03-01), None
patent: WO 9212518 (1992-07-01), None
patent: WO 9919878 (1999-04-01), None
Patent Abstract of Japan vol. 1996, No. 11, Nov. 29, 1996 & JP 08-181288 A.
Patent Abstract of Japan vol. 1998, No. 11, Sep. 30, 1998 & JP 10-163436 A.
Patent Abstract of Japan vol. 1999, No. 12, Oct. 29, 1999 & JP 11-177037.
European Search Report Dated May 3, 2004.
“An analysis of effects of device structures on retention characteristics in MFIS structures”, by M. Okuyama et al., Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12thIEEE Int. Symposium, pp. 337-340, vol. 1.
“Characteristics of Pt/SrTiO3/Pb (Zr0.52, Ti0.48) O3/SrTiO3)/Si ferroelectric gate oxide structure”, by Dong SuK Shin et al., Thiin Solid Films, 354(1999), pp. 251-255.
Arita Koji
Otsuki Tatsuo
Shimada Yasuhiro
Uchiyama Kiyoshi
Lee Eddie
Nixon & Peabody LLP
Owens Douglas W.
Studebaker Donald R.
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3438548