Semiconductor memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S315000

Reexamination Certificate

active

06876030

ABSTRACT:
A semiconductor memory device includes a field-effect transistor with a gate electrode that has been formed over a semiconductor substrate with a ferroelectric layer interposed between the electrode and the substrate. The device includes a first insulating layer, which is insulated against a leakage current more fully than the ferroelectric layer, between the ferroelectric layer and the gate electrode.

REFERENCES:
patent: 5378905 (1995-01-01), Nakamura
patent: 5498888 (1996-03-01), Ozawa
patent: 5998819 (1999-12-01), Yokoyama et al.
patent: 6067244 (2000-05-01), Ma et al.
patent: 6107656 (2000-08-01), Igarashi
patent: 6229166 (2001-05-01), Kim et al.
patent: 6297527 (2001-10-01), Agarwal et al.
patent: 6310373 (2001-10-01), Azuma et al.
patent: 6316800 (2001-11-01), Al-Shareef et al.
patent: 6368517 (2002-04-01), Hwang et al.
patent: 6396092 (2002-05-01), Takatani et al.
patent: 6410397 (2002-06-01), Ochiai et al.
patent: 6461982 (2002-10-01), DeBoer et al.
patent: 6476432 (2002-11-01), Basceri et al.
patent: 6483135 (2002-11-01), Mizuta et al.
patent: 6483167 (2002-11-01), Nabatame et al.
patent: 6486020 (2002-11-01), Thakur et al.
patent: 20010040249 (2001-11-01), Jung
patent: 20020043677 (2002-04-01), Jung
patent: 20020074601 (2002-06-01), Fox et al.
patent: 199 28 280 A 1 (2000-01-01), None
patent: 0 688 046 (1995-12-01), None
patent: 0 797 244 (1997-09-01), None
patent: 49-079434 (1974-07-01), None
patent: 05-090599 (1993-04-01), None
patent: 05-090599 (1993-04-01), None
patent: 405129625 (1993-05-01), None
patent: 07-099257 (1995-04-01), None
patent: 09-260612 (1997-10-01), None
patent: 10-294432 (1998-11-01), None
patent: 11-177037 (1999-07-01), None
patent: 2003-510848 (2003-03-01), None
patent: WO 9212518 (1992-07-01), None
patent: WO 9919878 (1999-04-01), None
Patent Abstract of Japan vol. 1996, No. 11, Nov. 29, 1996 & JP 08-181288 A.
Patent Abstract of Japan vol. 1998, No. 11, Sep. 30, 1998 & JP 10-163436 A.
Patent Abstract of Japan vol. 1999, No. 12, Oct. 29, 1999 & JP 11-177037.
European Search Report Dated May 3, 2004.
“An analysis of effects of device structures on retention characteristics in MFIS structures”, by M. Okuyama et al., Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12thIEEE Int. Symposium, pp. 337-340, vol. 1.
“Characteristics of Pt/SrTiO3/Pb (Zr0.52, Ti0.48) O3/SrTiO3)/Si ferroelectric gate oxide structure”, by Dong SuK Shin et al., Thiin Solid Films, 354(1999), pp. 251-255.

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