Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2005-03-29

2005-03-29

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S182000, C438S597000, C438S618000, C438S637000, C438S688000

Reexamination Certificate

active

06872653

ABSTRACT:
After deposition of a conductor film made of titanium tungsten over a main surface of a semiconductor substrate formed with grooves, an initial conductor film made of aluminium is further deposited. Subsequently, the conductor film is made to reflow and run into the grooves. Thereafter, while heating, further conductor films are respectively deposited, thereby causing these conductor films to run into the grooves. The provision of the initial conductor film suppresses or prevents aluminium in the further conductor films and silicon in the semiconductor substrate from reacting with each other during reflowing of the conductor films.

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patent: 2001-267569 (2001-09-01), None

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