Semiconductor memory device and manufacturing process for...

Details Semiconductor memory device and manufacturing process for... Semiconductor memory device and manufacturing process for...

2005-05-24

2005-05-24

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000

Reexamination Certificate

active

06897503

ABSTRACT:
In a semiconductor memory device having a capacitor layer comprising a dielectric film or a ferroelectric film, as an interlayer insulation film formed between the capacitor and a wiring layer formed at the upper part thereof or an insulation film which covers the wiring layer, a multilayered film is used which consists of a first insulation film and a second insulation film laid upon the other; the former being a lower layer and being formed of an organic film, and the latter being an upper layer and being formed of a hard-mask material.This makes it possible to prevent thin films comprised of a dielectric material or a ferroelectric material from any deterioration caused by the hydrogen and water contained in the interlayer insulation film and passivation film of the semiconductor memory device and also by the stress of these films.

REFERENCES:
patent: 5976928 (1999-11-01), Kirlin et al.
patent: 07-273297 (1995-10-01), None
patent: 11-126883 (1999-05-01), None
patent: 2000-164817 (2000-06-01), None

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