Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2005-05-10
2005-05-10
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
Reexamination Certificate
active
06890840
ABSTRACT:
An object of the present invention is to form a channel formation region, or a TFT formation region, using one crystal aggregate (domain) by controlling crystal location and size, thus suppressing TFT variations. According to the present invention, laser irradiation is performed selectively on an amorphous silicon film in the periphery of a channel formation region, or the periphery of a TFT formation region containing a channel formation region, source and drain region, and the like. Each TFT formation region is isolated, a metallic element for promoting crystallization (typically Ni) is added, and heat treatment is performed, thus making it possible to arbitrarily determine the locations of crystal aggregates (domains). It becomes possible to suppress variations in the TFTs by arbitrarily controlling the crystal aggregate (domain) locations.
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Arao Tatsuya
Isobe Atsuo
Coleman W. David
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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