Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2005-10-18
2005-10-18
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S207000, C365S208000
Reexamination Certificate
active
06956779
ABSTRACT:
A digital multibit non-volatile memory integrated system includes autozero multistage sensing. One stage may provide local sensing with autozero. Another stage may provide global sensing with autozero. A twisted bitline may be used for array arrangement. Segment reference may be used for each segment. The system may read data cells using a current sensing one or two step binary search. The system may use inverse voltage mode or inverse current mode sensing. The system may use no current multilevel sensing. The system may use memory cell replica sensing. The system may use dynamic sensing. The system may use built-in byte redundancy. Sense amplifiers capable of sub-volt (<<1V) sensing are described.
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DLA Piper Rudnick Gray Cary US LLP
Le Vu A.
Silicon Storage Technology, Inc.
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