Thin film magnetic memory device including memory cells...

Details Thin film magnetic memory device including memory cells... Thin film magnetic memory device including memory cells...

2005-10-11

2005-10-11

Mai, Son (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000

Reexamination Certificate

active

06954374

ABSTRACT:
In a tunneling magneto-resistance element, first and second free magnetic layers have a magnetization direction according to storage data. The first and second magnetic layers are arranged with an intermediate layer interposed therebetween. The intermediate layer is formed from a non-magnetic conductor. In data write operation, a data write current having a direction according to a write data level is supplied to the intermediate layer. A magnetic field generated by the current flowing through the intermediate layer magnetizes the first and second free magnetic layers with a looped manner.

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patent: 1245952 (2000-03-01), None

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