Phase-change memory devices with a self-heater structure

Details Phase-change memory devices with a self-heater structure Phase-change memory devices with a self-heater structure

2005-05-17

2005-05-17

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S200000, C257S530000, C257S734000, C438S131000, C365S145000, C365S175000

Reexamination Certificate

active

06894305

ABSTRACT:
Phase change memory devices include a phase-change memory layer on a semiconductor substrate. The phase-change memory layer has a major axis that is substantially parallel to a major axis of the semiconductor substrate and has a first surface and a second surface opposite the first surface that are substantially parallel to the major axis of the phase-change memory layer. A first electrode is provided on the semiconductor substrate that is electrically connected to the first surface of the phase-change memory layer in a first contact region of the phase-change memory layer. A second electrode is provided on the semiconductor substrate that is electrically connected to the phase-change memory layer in a second contact region of the phase-change memory layer. The second contact region is space apart from the first contact region.

REFERENCES:
patent: 20020036931 (2002-03-01), Lowrey et al.
patent: 20030209746 (2003-11-01), Horii
patent: 20040000678 (2004-01-01), Fricke et al.
Lai et al. “OUM-A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications,”IEDM Tech. Dig. 2001.

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