Semiconductor device having a lead including aluminum

Details Semiconductor device having a lead including aluminum Semiconductor device having a lead including aluminum

1995-06-07

1997-04-22

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257352, 257384, 257751, 257764, H01L 2976, H01L 2994, H01L 2701, H01L 2712

Patent

active

056231571

ABSTRACT:
An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

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