Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-15
2005-03-15
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S243000, C438S386000
Reexamination Certificate
active
06867449
ABSTRACT:
A capacitor structure includes a first electrode formed on a substrate assembly surface and on one or more side surfaces of a contact opening in the substrate assembly. A high- dielectric constant material is formed on at least a portion of the first electrode and a second electrode is formed on the high-dielectric constant material. At least one of the first and second electrodes comprises an adhesion layer formed of RuSixOy, where x and y are in a range of about 0.01 to about 10. The adhesion layer of at least one of the first and second electrodes may be formed on at least a portion of a silicon-containing region. The adhesion layers may consist of three to five monolayers of RuSixOy.
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Kraus Brenda D.
Marsh Eugene P.
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