Process for growing a dielectric layer on a...

Details Process for growing a dielectric layer on a... Process for growing a dielectric layer on a...

2005-03-08

2005-03-08

Meeks, Timothy (Department: 1762)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S769000, C438S770000, C438S773000, C438S774000, C438S775000, C427S255270, C427S255400

Reexamination Certificate

active

06864125

ABSTRACT:
This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3in the oxidizing ambiance greatly enhances the oxidation rate compared to an ambiance in which N2O is the only oxidizing agent. In addition to enhancing the oxidation rate of silicon, it is hypothesized that the presence of O3interferes with the growth of a thin silicon oxynitride layer near the interface of the silicon dioxide layer and the unreacted silicon surface which makes oxidation in the presence of N2O alone virtually self-limiting. The presence of O3in the oxidizing ambiance does not impair oxide reliability, as is the case when silicon is oxidized with N2O in the presence of a strong, fluorine-containing oxidizing agent such as NF3or SF6.

REFERENCES:
patent: 5294571 (1994-03-01), Fujishiro et al.
patent: 5397720 (1995-03-01), Kwong et al.
patent: 5434090 (1995-07-01), Chiou et al.
patent: 5580815 (1996-12-01), Hsu et al.
patent: 6607946 (2003-08-01), Sandhu et al.
patent: 4333160 (1995-03-01), None
patent: 4075354 (1992-03-01), None
patent: 5343421 (1993-12-01), None
patent: 8078693 (1996-03-01), None

Affiliated with

Also associated with

Rating

Process for growing a dielectric layer on a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for growing a dielectric layer on a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for growing a dielectric layer on a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3434414