Insulated gate semiconductor device

Details Insulated gate semiconductor device Insulated gate semiconductor device

1995-11-21

1997-04-22

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257331, H01L 2976, H01L 2994

Patent

active

056231520

ABSTRACT:
An insulated gate semiconductor device includes a gate trench having a gate electrode formed therein on a gate insulating film, and an emitter trench having an emitter electrode formed therein on a silicon oxide layer, to form a capacitance of a capacitor in a main current path by using the silicon oxide layer in the emitter trench, whereby a transient voltage upon switching is decreased and an application system including a snubber circuit is reduced in size.

REFERENCES:
IBM Technical Disclosure Bulletin, vol. 22, No. 10, pp. 4523-4525, Mar. 1980, P. J. Tsang, "Method of Forming Side-Contact".

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