Semiconductor device and fabrication process therefor

Details Semiconductor device and fabrication process therefor Semiconductor device and fabrication process therefor

2005-05-03

2005-05-03

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S335000, C257S336000, C257S337000, C257S366000, C257S408000, C257S413000, C438S286000

Reexamination Certificate

active

06888191

ABSTRACT:
A semiconductor device comprises: a semiconductor substrate of a first conductivity type; a first electrode provided on the semiconductor substrate with the intervention of a gate insulation film; a second electrode provided at least on the first electrode with the intervention of an intermediate insulation film; and a pair of impurity regions of a second conductivity type provided in a spaced relation in the semiconductor substrate, at least one of the impurity regions comprising a low concentration impurity region, an intermediate concentration impurity region and a high concentration impurity region sequentially arranged in this order from a region located underneath the first electrode.

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