Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-04
2005-01-04
Quach, T. N. (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S656000, C438S680000, C438S683000, C438S685000
Reexamination Certificate
active
06838376
ABSTRACT:
A method of forming a barrier metal film formed of a nitride film including tungsten by thermal CVD. The method includes positioning a substrate in a processing vessel and forming a WSi film on one side of the substrate by supplying a process gas including WF6gas and at least one of SiR4gas, SiH2Cl2gas and Si2H6gas into the processing vessel while a processing pressure in the processing vessel is maintained. The method also includes shutting off the supplying of the process gas into the processing vessel and completely removing the process gas from the processing vessel by supplying a purging gas into the processing vessel after the shutting off the supplying. The WSi film is nitrided by supplying NH3gas or MMH gas into the processing vessel from which the process gas has been removed, to form a WSixNy film.
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Matsuse Kimihiro
Otsuki Hayashi
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Quach T. N.
Tokyo Electron Limited
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