Semiconductor device

Details Semiconductor device Semiconductor device

2005-03-01

2005-03-01

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257S340000, C257S343000

Reexamination Certificate

active

06861702

ABSTRACT:
A lateral MOSFET exhibiting a high breakdown voltage includes a plurality of unit devices formed in a semiconductor substrate; each unit device including a trench, the side face thereof being extended at any angle from 30 degrees to 90 degrees with respect to the surface of trench; an offset drain region surrounding the side face and the bottom face of trench; an insulator filling trench; a gate electrode extended onto trench such that gate electrode works as a field plate; a source electrode extended above trench such that source electrode works as a field plate; and a drain electrode extended above trench such that drain electrode works as a field plate.

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