Organic polarizable gate transistor apparatus and method

Details Organic polarizable gate transistor apparatus and method Organic polarizable gate transistor apparatus and method

2005-03-22

2005-03-22

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S314000, C257S405000, C257S406000, C257S410000, C257S411000

Reexamination Certificate

active

06870180

ABSTRACT:
An apparatus having a circuit coupled to the gate contact of field effect transistor wherein the transistor's gate includes a dielectric layer of which at least a portion is an organic dielectric. The circuit is configured to produce one or more storage voltage pulses that cause charge to be stored in the dielectric layer. The field effect transistor has a semiconductor layer with a conductive path whose conductivity changes for a given Vgin response to storing the charge. The circuit may produce one or more dissipation voltage pulses having a voltage of opposite sign to the one or more storage pulses, that cause dissipation of charge stored in the dielectric layer. Further disclosed are a memory and a method of electronically storing and reading information, both utilizing the organic-based polarizable gate transistor apparatus.

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