Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-29
2005-03-29
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S339000, C257S342000, C257S343000, C257S344000
Reexamination Certificate
active
06873011
ABSTRACT:
A high voltage LDMOS transistor according to the present invention includes P-field blocks in the extended drain region of a N-well. The P-field blocks form the junction-fields in the N-well for equalizing the capacitance of parasitic capacitors between the drain region and the source region and fully deplete the drift region before breakdown occurs. A higher breakdown voltage is therefore achieved and the N-well having a higher doping density is thus allowed. The higher doping density reduces the on-resistance of the transistor. Furthermore, the portion of the N-well generated beneath the source diffusion region produces a low-impedance path for the source region, which restricts the transistor current flow in between the drain region and the source region.
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Chien Tuo-Hsin
Huang Chih-Feng
Lin Jenn-yu G.
Yang Ta-yung
Eckert George
J.C. Patents
Richards N. Drew
System General Corp.
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