Semiconductor device having improved doping profiles and a...

Details Semiconductor device having improved doping profiles and a... Semiconductor device having improved doping profiles and a...

2005-01-25

2005-01-25

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S303000, C438S305000

Reexamination Certificate

active

06846708

ABSTRACT:
An implanting process for amorphizing a crystalline substrate is proposed according to the present invention. In particular, according to the present invention, amorphous regions are formed in a substrate by exposing the substrate to an ion beam which is kept at a tilt angle between 10 and 80 degrees with respect to the surface of the substrate. Accordingly, ion channeling during subsequent implanting processes is prevented not only in the vertical direction but also in the horizontal direction so that doped regions exhibiting optimum doping profile tailoring may be realized.

REFERENCES:
patent: 5885886 (1999-03-01), Lee
patent: 6268640 (2001-07-01), Park et al.
patent: 6593623 (2003-07-01), Sultan

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