Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-19
2005-07-19
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S391000, C438S276000
Reexamination Certificate
active
06919607
ABSTRACT:
A structure of a 2-bit mask ROM device and a fabrication method thereof are provided. The memory structure includes a substrate, a gate structure, a 2-bit coding implantation region, a spacer, a buried drain region, an isolation structure and a word line. The gate structure is disposed on the substrate, while the coding implantation region is located in the substrate under the side of the gate structure. Further, at least one spacer is arranged beside the side of the gate structure and a buried drain region is disposed in the substrate beside the side of the spacer. Moreover, the buried drain region and the coding implantation region further comprise a buffer region in between. Additionally, an insulation structure is arranged on the substrate that is above the buried drain region, while the word lien is disposed on the gate structure.
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Chan Kwang-Yang
Fan Tso-Hung
Liu Mu-Yi
Lu Tao-Cheng
Yeh Yen-Hung
J.C. Patents
Lee Eugene
MACRONIX International Co. Ltd.
Thomas Tom
LandOfFree
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