Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-05-03
2005-05-03
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S758000, C257S759000, C257S760000
Reexamination Certificate
active
06888244
ABSTRACT:
An interconnect arrangement (100) has a first layer (101), a first layer surface (102), thereon at least two interconnects (104) having a second layer surface (105) essentially parallel to the first layer surface (102), thereon a respective second layer (106) for each interconnect (104), the second layers (106) of adjacent interconnects covering regions between the adjacent interconnects (104), and thereon a third layer (107), which completely closes off the regions between the adjacent interconnects (104) by means of coverage.
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Engelhardt Manfred
Schindler Guenther
Altera Law Group LLC
Clark Jasmine
Infineon - Technologies AG
Stone Jeffrey R.
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