Method for fabricating contact pad of semiconductor device

Details Method for fabricating contact pad of semiconductor device Method for fabricating contact pad of semiconductor device

2005-07-12

2005-07-12

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S641000

Reexamination Certificate

active

06916733

ABSTRACT:
The method forming a contact pad of a semiconductor device, including forming a plurality of conductive layer patterns displaced on a silicon substrate with adjoining to each other; forming an insulating layer on a top of the conductive layer patterns; depositing a material layer serving as a hard mask on the insulating layer; forming a photoresist pattern between the conductive layer patterns on the hard mask material layer to form a contact hole; defining an area for forming a contact by forming by etching the hard mask material layer with utilizing the photoresist pattern as an etching mask; removing the photoresist pattern; exposing the silicon substrate by etching the insulating layer with utilizing the hard mask as an etching mask to thereby form an open portion; forming a polymer layer on the open portion; exposing the silicon substrate by removing the hard mask and the polymer layer by implementing an etch back process; and forming a contacted pad on the exposed silicon substrate.

REFERENCES:
patent: 5854127 (1998-12-01), Pan
patent: 6037211 (2000-03-01), Jeng et al.
patent: 6232656 (2001-05-01), Yabu et al.
patent: 6261968 (2001-07-01), Lee
patent: 6329251 (2001-12-01), Wu
patent: 6358863 (2002-03-01), Desu et al.

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