SOI semiconductor device

Details SOI semiconductor device SOI semiconductor device

2005-04-26

2005-04-26

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257S409000

Reexamination Certificate

active

06885067

ABSTRACT:
A power IC for an automobile engine control unit incorporating at least one semiconductor device comprising an N-channel insulated-gate filed-effect transistor formed on an SOI substrate, having an N-type layer having a concentration higher than a concentration of an N-type layer in contact with a p-body layer contacting a gate oxide film of the transistor. The high concentration N-type layer is formed in a region covering at most 95% of the source-drain distance between the p-body layer and a drain electrode of the transistor in the silicon substrate over an interface of a buried oxide film, the silicon substrate being in contact with both the field oxide film and the high concentration N-type layer contacting the drain electrode.

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Japanese Office Action dated May 11, 2004.

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