Non-volatile memory and semiconductor device

Details Non-volatile memory and semiconductor device Non-volatile memory and semiconductor device

2005-05-31

2005-05-31

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S347000, C257S350000, C257S052000, C257S083000, C257S088000

Reexamination Certificate

active

06900499

ABSTRACT:
A non-volatile memory comprising a semiconductor active layer provided on an insulating substrate, an insulating film provided on the semiconductor active layer, a floating gate electrode provided on the insulating film, an anodic oxidized film obtained by anodic oxidation of the floating gate electrode, and a control gate electrode provided in contact with the anodic oxidized film, and a semiconductor device, particularly a liquid crystal display device comprising the non-volatile memory.

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