Method of selectively making copper using plating technology

Details Method of selectively making copper using plating technology Method of selectively making copper using plating technology

2005-01-11

2005-01-11

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S633000, C438S672000, C438S678000, C438S687000

Reexamination Certificate

active

06841466

ABSTRACT:
A method of forming a more uniform copper interconnect layer is described. A dielectric layer, electroconductive (EC) layer, and a photoresist layer are sequentially deposited on a substrate. An opening in the photoresist is etched through the dielectric layer while the EC layer serves as a hard mask. Following deposition of a diffusion barrier layer and copper seed layer on the EC layer and in the opening, the copper seed layer is removed above the EC layer by a first CMP step. The EC layer serves as a CMP stop to protect the dielectric layer and provides a more uniform surface for subsequent steps. Copper is selectively deposited on the seed layer within the opening. A second CMP step lowers the copper layer to be coplanar with the dielectric layer and removes the EC layer. The resulting copper interconnect layer has a more uniform thickness and surface for improved performance.

REFERENCES:
patent: 5666007 (1997-09-01), Chung
patent: 6004188 (1999-12-01), Roy
patent: 6153935 (2000-11-01), Edelstein et al.
patent: 6187670 (2001-02-01), Brown et al.
patent: 6417095 (2002-07-01), Chen
patent: 6420258 (2002-07-01), Chen et al.
patent: 6441492 (2002-08-01), Cunningham
patent: 6482741 (2002-11-01), Ueno
patent: 6509267 (2003-01-01), Woo et al.
patent: 6528426 (2003-03-01), Olsen et al.
patent: 6613686 (2003-09-01), Nishizama

Affiliated with

Also associated with

Rating

Method of selectively making copper using plating technology does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of selectively making copper using plating technology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of selectively making copper using plating technology will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3429783