Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-10
2005-05-10
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S009000, C257S346000
Reexamination Certificate
active
06891227
ABSTRACT:
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
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Appenzeller Joerg
Avouris Phaedon
Chan Kevin K.
Collins Philip G.
Martel Richard
F. Chau & Associates LLC
Hu Shouxiang
International Business Machines - Corporation
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