Multi-level shielded multi-conductor interconnect bus for MEMS

Details Multi-level shielded multi-conductor interconnect bus for MEMS Multi-level shielded multi-conductor interconnect bus for MEMS

2005-01-11

2005-01-11

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S680000, C438S681000

Reexamination Certificate

active

06841464

ABSTRACT:
A multi-level shielded multi-conductor interconnect bus for use in interconnecting MEM devices with control signal sources and a method of fabricating a multi-level shielded multi-conductor interconnect bus are disclosed. In one embodiment, a multi-level shielded interconnect bus (410A) formed on a substrate (20) includes first and second level electrically conductive lines (42, 92) arranged in sets of one, two or more conductive lines between first and second level electrically conductive shield walls (46, 66, 96). The first and second level electrically conductive lines (42, 92) are surrounded by various layers of dielectric material (30, 50, 80, 100). A first level electrically conductive shield (78) overlies the first level electrically conductive lines (42) and shield walls (46, 66). A second level electrically conductive shield (112) overlies the second level electrically conductive lines (92) and shield walls (96).

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