Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-09-27
2005-09-27
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S106000, C438S127000, C029S841000, C029S847000, C029S854000, C029S855000, C216S095000, C216S096000, C216S106000
Reexamination Certificate
active
06949470
ABSTRACT:
Priorly, semiconductor devices wherein a flexible sheet with a conductive pattern was employed as a supporting substrate, a semiconductor element was mounted thereon, and the ensemble was molded have been developed. In this case, problems occur that a multilayer wiring structure cannot be formed and warping of the insulating resin sheet in the manufacturing process is prominent. In order to solve these problems, a laminated plate10formed by laminating a first conductive film11and a second conductive film12is covered with a photoresist layer PR having opening portions13with inclined surfaces13S, a conductive wiring layer14is formed in the opening portions by electrolytic plating to form inverted inclined surfaces14R, and then, when covering the same with the sealing resin layer21, an anchoring effect is produced by making the sealing resin layer21bite into the inverted inclined surfaces14R so as to strengthen bonding of the sealing resin layer21with the conductive wiring layer14.
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Igarashi Yusuke
Mizuhara Hideki
Sakamoto Noriaki
Chen Eric B.
Kanto Sanyo Semiconductors Co., Ltd.
Norton Nadine G.
Sanyo Electric Co,. Ltd.
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