Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2005-09-13

2005-09-13

Wilson, Christian (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S317000, C257S318000, C257S319000

Reexamination Certificate

active

06943400

ABSTRACT:
A semiconductor device including an IGFET (insulated gate field effect transistor) (30) is disclosed. IGFET (30) may include a source/drain area (15) having an impurity concentration distribution that may be formed shallower at a higher concentration than the impurity concentration distribution in another source/drain area (7). A gate oxide film may include a first gate oxide film (5) adjacent to source/drain area (7) and a second gate oxide film (12) adjacent to source drain area (15). Second gate oxide film (12) may be thinner than first gate oxide film (5). An impurity concentration distribution of a second channel impurity area (11) under second gate oxide film (12) may be at a higher concentration than an impurity concentration distribution of a first channel impurity area (9) under first gate oxide film (5). In this way, an electric field at a PN junction of source/drain area (7) may be reduced.

REFERENCES:
patent: 5047816 (1991-09-01), Cuevas
patent: 5600168 (1997-02-01), Lee
patent: 5821581 (1998-10-01), Kaya et al.
patent: 6255166 (2001-07-01), Ogura et al.
patent: 6420233 (2002-07-01), Hsieh et al.

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