Semiconductor device, semiconductor gate array,...

Details Semiconductor device, semiconductor gate array,... Semiconductor device, semiconductor gate array,...

2005-09-06

2005-09-06

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000, C257S354000, C257S494000, C257S495000

Reexamination Certificate

active

06940138

ABSTRACT:
A structure is provided which suppresses a parasitic bipolar effect without decreasing the breakdown voltage at the junctions between the excessive carrier extracting region and source/drain regions of a MOS transistor for a voltage of approximately 15 volts in a semiconductor device formed on a semiconductor layer on an insulating layer. In the MOS transistor having a source tied body structure, a semiconductor regions having a low impurity concentration is formed between a regions for extracting excessive carriers and source/drain regions. Thus, the breakdown voltage at the junctions between the extracting regions and the source/drain regions is increased and a parasitic bipolar effect is suppressed without breakdown between the extracting regions and the source/drain regions.

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