Semiconductor device with smoothed pad portion

Details Semiconductor device with smoothed pad portion Semiconductor device with smoothed pad portion

2005-03-29

2005-03-29

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S404000, C257S758000, C257S773000, C257S208000, C257S211000, C257S403000

Reexamination Certificate

active

06873053

ABSTRACT:
A semiconductor forming transistors on a semiconductor substrate includes a low concentration source/drain region formed in the semiconductor substrate, a high concentration source/drain region formed in the source/drain region, a gate electrode formed on the substrate through gate oxide film, a P type body region formed under the gate electrode and placed between the source/drain regions and, plug contact portions contacting the source/drain region and arranged in plural, and a source/drain electrode connecting to the source/drain region with contact through the contact portions.

REFERENCES:
patent: 6031257 (2000-02-01), Noto et al.
patent: 6476491 (2002-11-01), Harada et al.
patent: 20010013657 (2001-08-01), Anand
patent: 09-148526 (1997-06-01), None
patent: 2000-174268 (2000-06-01), None
Taiwanese Office Action dated Nov. 1, 2002.
Clement H. Wann, “A Comparative Study of Advanced MOSFET Concepts”,IEE Transactions of Electric; vol. 43,(1996).
“Phenomena in Graded Junction Devices”;Texas Instruments Incorporated.
McGraw-Hill, “ULSI Technology”, (1996).

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