Non-volatile semiconductor memory device having a dielectric...

Details Non-volatile semiconductor memory device having a dielectric... Non-volatile semiconductor memory device having a dielectric...

2005-04-19

2005-04-19

Mai, Anh Duy (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S319000

Reexamination Certificate

active

06882002

ABSTRACT:
The structure and manufacturing method of a non-volatile semiconductor memory device are provided. The method for manufacturing a cell stack includes steps of: (a) providing a substrate; (b) forming on the substrate an oxide layer, a first conductive layer, a first dielectric layer, and a second conductive layer sequentially; (c) etching back to form a first recess pattern; (d) filling with a second dielectric layer; (e) depositing a third dielectric layer; (f) depositing a fourth dielectric layer; (g) etching to form a second recess pattern; (h) depositing a barrier layer on the second recess pattern; and (i) filling with a third conductive layer. The proposed structure of a cell stack includes a substrate, an oxide layer, a first stack, a second dielectric layer, a second stack, a third dielectric layer, and a fourth dielectric layer.

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