Semiconductor storage device

Static information storage and retrieval – Read/write circuit – Including signal comparison

Reexamination Certificate

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Details

C365S189090, C365S185200, C365S185210, C365S065000, C365S200000, C365S210130

Reexamination Certificate

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06839289

ABSTRACT:
A semiconductor storage device includes a first signal line connected to a first reference cell, a second signal line connected to a second reference cell and a potential supply circuit having first and second states. In a first state, the potential supply circuit responds to a second control signal at a first potential level, and supplies first and second reference cells respectively with potentials corresponding to first data via a first signal line and second data via a second signal line. In a second state, the potential supply circuit responds to a second control signal at a second potential level, and supplies the first and second reference cells respectively with potentials corresponding to first data via the first signal line and first data via the second signal line. A reference potential generation circuit thus decreases imprint and fatigue of a ferroelectric film of a reference cell.

REFERENCES:
patent: 07-192476 (1995-07-01), None
patent: 08-115596 (1996-05-01), None
patent: 09-171696 (1997-06-01), None
patent: 09-231775 (1997-09-01), None

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