Semiconductor device with gate dielectric film having an...

Details Semiconductor device with gate dielectric film having an... Semiconductor device with gate dielectric film having an...

2005-09-27

2005-09-27

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06949804

ABSTRACT:
A semiconductor device includes a silicon substrate and a gate dielectric film provided on the silicon substrate. The gate dielectric film includes at least a first oxide film and an oxynitride film formed on the first oxide film. A peak position of a concentration of nitrogen of the gate dielectric film is located in a range of 0.5 nm-1.5 nm from a surface thereof, and in a range of 0.3 nm-2.0 nm from an interface thereof with the silicon substrate, and an element concentration peak of the nitrogen is 7×1021or greater.

REFERENCES:
patent: 6372581 (2002-04-01), Bensahel et al.

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