Photoresist monomers, polymers thereof and photoresist...

Details Photoresist monomers, polymers thereof and photoresist... Photoresist monomers, polymers thereof and photoresist...

2005-07-26

2005-07-26

Thornton, Yvette C. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S286100, C430S905000, C526S281000, C526S256000, C568S018000

Reexamination Certificate

active

06921622

ABSTRACT:
Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymer includes a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist composition containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device

REFERENCES:
patent: 3449302 (1969-06-01), Nachbur et al.
patent: 4182837 (1980-01-01), Hergenrother et al.
patent: 5922518 (1999-07-01), Davies et al.
patent: 2002/0061464 (2002-05-01), Aoai et al.
patent: 1057664 (1967-02-01), None
Sigma-Aldrich Product No. B8,450-5 Butadiene Sulfone; www.sigmaaldrich.com.
“Polymerization of Butadiene Sulfone” Minoura et al. Journal of Polymer Science Part A-1: Polymer Chemistry; vol. 4, Issue 12, pp. 2929-2944 Dec. 1966.

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