Semiconductor device with silicide source/drain and high-K...

Details Semiconductor device with silicide source/drain and high-K... Semiconductor device with silicide source/drain and high-K...

2005-05-17

2005-05-17

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000

Reexamination Certificate

active

06894355

ABSTRACT:
A semiconductor device and method of manufacture. The semiconductor device having a silicide source and a silicide drain; a semiconductor body disposed between the source and the drain; a gate electrode disposed over the body and defining a channel interposed between the source and the drain; and a gate dielectric made from a high-K material and separating the gate electrode and the body.

REFERENCES:
patent: 4080719 (1978-03-01), Wilting
patent: 4419812 (1983-12-01), Topich
patent: 4657628 (1987-04-01), Holloway et al.
patent: 5661043 (1997-08-01), Rissman et al.
patent: 5693554 (1997-12-01), Lee
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5851921 (1998-12-01), Gardner et al.
patent: 5937315 (1999-08-01), Xiang et al.
patent: 5989957 (1999-11-01), Ngo et al.
patent: 6002150 (1999-12-01), Gardner et al.
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6060755 (2000-05-01), Ma et al.
patent: 6100204 (2000-08-01), Gardner et al.
patent: 6160291 (2000-12-01), Imai
patent: 6210999 (2001-04-01), Gardner et al.
patent: 6278165 (2001-08-01), Oowaki et al.
patent: 6291282 (2001-09-01), Wilk et al.
patent: 6303479 (2001-10-01), Snyder
patent: 6423619 (2002-07-01), Grant et al.
patent: 6555424 (2003-04-01), Lin et al.
patent: 6590271 (2003-07-01), Liu et al.
patent: 20010031562 (2001-10-01), Raajimakers et al.
Poon et al., “Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon,” Proceedings of Electron Devices Meeting, 1997, IEEE, p. 65-68.

Affiliated with

Also associated with

Rating

Semiconductor device with silicide source/drain and high-K... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with silicide source/drain and high-K..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with silicide source/drain and high-K... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3423004