Flash process for stacking poly etching

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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Details

C438S230000, C438S585000, C438S669000, C438S696000, C438S710000, C438S761000, C438S778000, C438S798000

Reexamination Certificate

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06943119

ABSTRACT:
In accordance with the objectives of the invention a new Method and recipe is provided for etching of stacked layers of polysilicon. The invention provides for an added flash step after the conventional Overall Etch (OE).

REFERENCES:
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patent: 6033950 (2000-03-01), Chen et al.
patent: 6103621 (2000-08-01), Huang
patent: 6103622 (2000-08-01), Huang
patent: 6165375 (2000-12-01), Yang et al.
patent: 6165861 (2000-12-01), Liu et al.
patent: 6297528 (2001-10-01), Chen et al.
patent: 6586299 (2003-07-01), Tsai
patent: 2002/0173150 (2002-11-01), Kawai et al.
patent: 2004/0121545 (2004-06-01), Chen et al.

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