Transistor-type ferroelectric nonvolatile memory element

Details Transistor-type ferroelectric nonvolatile memory element Transistor-type ferroelectric nonvolatile memory element

2005-04-26

2005-04-26

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S296000, C257S300000, C257S632000, C438S254000

Reexamination Certificate

active

06885048

ABSTRACT:
A transistor-type ferroelectric nonvolatile memory element having an MFMIS (metal-ferroelectric-metal-insulator-semiconductor) structure that can be highly densely integrated. The MFMIS transistor has a constitution in which the MFM (metal-ferroelectric-metal) structure and the MIS (metal-insulator-semiconductor) structure are stacked up and down on nearly the same area, and the lower MIS structure has means for increasing the effective area of the MIS capacitance. Means for increasing the effective area of the capacitor is a trench in the semiconductor substrate, ruggedness in the MIS structure or a MIN (metal-insulator-metal) structure.

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“Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi2Ta2O9Film and SrTa2O6/SiON Buffer Layer” Extended Abstracts of the International Conference on Solid State Devices and Materials, Japan Society of Applied Physics, Tokyo, Japan; 1999, pp. 404-405, XP000935143; *p. 405; figure 1*.

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