Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2005-04-05
2005-04-05
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S149000, C438S166000, C438S164000
Reexamination Certificate
active
06875674
ABSTRACT:
At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.
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Asami Taketomi
Ichijo Mitsuhiro
Toriumi Satoshi
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Isaac Stanetta
Niebling John F.
Semiconductor Energy Laboratory Co,. Ltd.
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