Thin film transistor and method of manufacturing the same

Details Thin film transistor and method of manufacturing the same Thin film transistor and method of manufacturing the same

2005-07-12

2005-07-12

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S072000

Reexamination Certificate

active

06917079

ABSTRACT:
A metal element typified by Ni has an adverse effect on device properties of a TFT, and consequently, a step for removing the elements (hereinafter referred to as a gettering step) has been carried out. However, gettering steps as described above have the disadvantage of high cost due to an increase in the number of steps. Accordingly, a manufacturing method of a crystalline semiconductor film, which does not require a gettering step, has been in demand.A TFT of the present invention is characterized by reducing the concentration of the metal element, typically Ni, in the crystalline semiconductor film to less than 4×1016atoms/cm3, more specifically, 5×1015atoms/cm3to 3×1016atoms/cm3, preferably, 7×1015atoms/cm3to 3×1016atoms/cm3. And the present invention enables crystallization even by the metal element with a low concentration and an omission of a gettering step.

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