MOSgated device with accumulated channel region and Schottky...

Details MOSgated device with accumulated channel region and Schottky... MOSgated device with accumulated channel region and Schottky...

2005-04-12

2005-04-12

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S341000, C257S476000, C257S486000

Reexamination Certificate

active

06878994

ABSTRACT:
A MOSgated device has spaced vertical trenches lined with a gate oxide and filled with a P type polysilicon gate. The gate oxide extends along a vertical N−channel region disposed between an N+source region and an N−drift region. A Schottky barrier of aluminum is disposed adjacent the accumulation region extending along the trench to collect holes which are otherwise injected into the source region during voltage blocking. A common source or drain contact is connected to the N+region and to the Schottky contact. A two gate embodiment is disclosed in which separately energized gates are connected to alternatively located gate polysilicon volumes.

REFERENCES:
patent: 5679966 (1997-10-01), Baliga et al.
patent: 6580123 (2003-06-01), Thapar
patent: 20040119103 (2004-06-01), Thapar

Affiliated with

Also associated with

Rating

MOSgated device with accumulated channel region and Schottky... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOSgated device with accumulated channel region and Schottky..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSgated device with accumulated channel region and Schottky... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3420540